The femtosecond energy diffusion sensor is presented as a non-contact tool for the use in the characterization of thin film hydrogenated amorphous silicon (a-Si:H) photovoltaic cells. The sensor is based on the pump-probe technique and when used with the appropriate models, this non-contact, non-destructive tool is shown to be capable of measuring important material characteristics of each layer of a p-i-n junction including bandgap and density of states. When fully developed, it is believed that the sensor could be used in a factory environment to detect and solve problems rapidly and to maintain control of the entire manufacturing process.
The Femtosecond Energy Diffusion Sensor: A Non-contact Tool for Photovoltaic Characterization
Contributed by the Solar Energy Division of THE AMERICAN SOCIETY OF MECHANICAL ENGINEERS for publication in the ASME JOURNAL OF SOLAR ENERGY ENGINEERING. Manuscript received by the ASME Solar Division June 2003; final revision April 2004. Associate Editor: A. Walker.
McLeskey, , J. T., Jr., and Norris, P. M. (February 7, 2005). "The Femtosecond Energy Diffusion Sensor: A Non-contact Tool for Photovoltaic Characterization ." ASME. J. Sol. Energy Eng. February 2005; 127(1): 131–137. https://doi.org/10.1115/1.1767991
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