...Liang Chen; Satish Kumar Greek Symbols α = index for dimensions ɛ = depth of potential well in L–J potential θ = spectral energy density ρ = phonon density of states σ = distance parameter in L–J potential τ...

.... , 1993 , “ Kapitza Conductance and Heat Flow Between Solids at Temperatures From 50 to 300 K ,” Phys. Rev. B , 48 , pp. 16373–16387. 10.1103/PhysRevB.48.16373 [12] Beechem , T. , Duda , J. C. , Hopkins , P. E. , and Norris , P. M. , 2010 , “ Contribution of Optical Phonons...

...Chunjian Ni; Jayathi Y. Murthy A sub-micron thermal transport model based on the phonon Boltzmann transport equation (BTE) is developed using anisotropic relaxation times. A previously-published model, the full-scattering model, developed by Wang, directly computes three-phonon scattering...

... analysis immersed boundary uncertainty quantification phonons Boltzmann transport equation Over the last few decades, computational fluid dynamics (CFD) and computational heat transfer (CHT) have increasingly become an integral part of the industrial design and analysis cycle. Today, nearly...

... length within the resulting composite systems. Consequently, thermal transport in these systems is governed as much by the interfaces between the constituent materials as it is by the materials themselves. This paper reports the behavior of phononic thermal transport across interfaces between isotropic...

... crystallographic reconfigurations, where the atomic basis, symmetry, and periodicity of the alloy change dramatically. Consequently, phonon behavior in these alloys will vary greatly depending on the type and degree of ordering achieved. To investigate these phenomena, the role of the order–disorder transition...

...Zhen Huang; Jayathi Y. Murthy; Timothy S. Fisher In this work, the atomistic Green’s function method is extended to compute transmission functions for each phonon polarization. The eigenvectors and eigenvalues of the overall density of states matrices are manipulated to yield a density of states...

... - 4 m 2 /s which will be satisfied only at the extremities of the length/time scales, i.e., for a large value of ω 1 at a corresponding small value of L and vice versa. In other words, if the length scale is of the order of mean free path of phonons (say L  = 10 nm...

...M. Kazan A model for the thermal conductance of an interface is developed. It interpolates between the widely used acoustic mismatch model and diffuse mismatch model and accounts for the phonon dispersion curves of the materials in contact as calculated from first principles technique...

...Arpit Mittal; Sandip Mazumder A generalized form of the ballistic-diffusive equations (BDEs) for approximate solution of the Boltzmann Transport equation (BTE) for phonons is formulated. The formulation presented here is new and general in the sense that, unlike previously published formulations...

... of thermoelectric devices. The current work explores the possibility of thermally rectifying devices with the use of nanostructured interfaces. Interfaces can theoretically result in thermally rectifying behavior because of the difference in phonon frequency content between two dissimilar materials. The current...

... conductance is driven by the phononic scattering mechanisms of the materials comprising the interface as opposed to the heat capacities of those materials. The model developed in this work assumes that a phonon on one side of an interface may not scatter at the interface itself but instead scatter...

...Dhruv Singh; Jayathi Y. Murthy; Timothy S. Fisher Phonon transport across constrictions formed by a nanowire or a nanoparticle on a substrate is studied by a numerical solution of the gray Boltzmann transport equation (BTE) resolving the effects of two length scales that govern problems...

... is approximately 600 W / m K at room temperature. While this value is lower than the reported basal plane values for graphite and suspended graphene because of phonon leakage across the graphene-support interface, it is still considerably higher than the values for common thin film electronic materials. Here, we...

...T. J. Bright; Z. M. Zhang One of the approaches for micro/nanoscale heat transfer in semiconductors and dielectric materials is to use the Boltzmann transport equation, which reduces to the equation of phonon radiative transfer under the relaxation time approximation. Transfer and generation...

... to solve the Boltzmann transport equation (BTE) for phonons using molecular dynamics (MD), including phonon relaxation times, dispersion relations, group velocities, and specific heat, (ii) applying quantum corrections to the MD results to make them suitable for the solution of BTE, and (iii) numerically...

...Arvind Pattamatta; Cyrus K. Madnia Ultrashort-pulsed laser irradiation on semiconductors creates a thermal nonequilibrium between carriers and phonons. Previous computational studies used the “two-temperature” model and its variants to model this nonequilibrium. However, when the laser pulse...

...Zeng-Yuan Guo; Quan-Wen Hou In times comparable to the characteristic time of the energy carriers, Fourier’s law of heat conduction breaks down and heat may propagate as waves. Based on the concept of thermomass, which is defined as the equivalent mass of phonon gas in dielectrics, according...

...Arpit Mittal; Sandip Mazumder The Monte Carlo method has found prolific use in the solution of the Boltzmann transport equation for phonons for the prediction of nonequilibrium heat conduction in crystalline thin films. This paper contributes to the state-of-the-art by performing a systematic study...

... and theoretically presented. The enhanced coherency is due to coherent coupling between resonant cavities obtained by surface standing waves, wherein each cavity supports a localized field that is attributed to coupled surface phonon polaritons. We show that it is possible to obtain a polarized quasimonochromatic...