...-copper system with a gold-tin solder bond layer. The results obtained are likely to be useful in interfacial stress evaluation and physical design of bimaterial assemblies used in microelectronics and photonics applications. 11 02 2011 13 09 2011 15 09 2011 21 12 2011 21 12 2011...

...Chu-Hsuan Sha; Chin C. Lee Formation of pure silver (Ag) flip-chip interconnect of silicon (Si) chips on copper (Cu) substrates is reported. Arrays of Ag columns, each 36 μm in height and 40 μm in diameter, are fabricated on 2-in. Si wafers which are first coated with chromium (Cr)/gold (Au) dual...

....68.064114 10 Mei , J. , Davenport , J. W. , and Fernando , G. W. , 1991 , “ Analytic Embedded-Atom Potentials for fcc Metals: Application to Liquid and Solid Copper ,” Phys. Rev. B , 43 ( 6 ), pp. 4653 – 4658 . 10.1103/PhysRevB.43.4653 11 Tsuru , T. , and Shibutani...

.... A comparison study between the results from the CFD simulation and the ANN analysis indicates that the ANN accurately predicts the cooling performance of electronic components within the given range of data. computational fluid dynamics cooling copper electronics packaging laminar flow nanofluidics...

...Myung Jin Yim; Yi Li; Kyoung Sik Moon; C. P. Wong This paper describes the development and characterization of anisotropically conductive films (ACFs) incorporated with copper (Cu) particles as electrically conductive fillers for environmentally friendly, low cost, high electrical, and high thermal...

... , pp. 55 – 105 . 0927-796X Luo , W. C. , Ho , C. E. , Tsai , J. Y. , Lin , K. L. , and Kao , C. R. , 2005 , “ Solid-State Reactions Between Ni and Tin-Silver-Copper Solders With Different Cu Concentrations ,” Mater. Sci. Eng., A , 396 , pp. 385 – 391 . 0921-5093...

...Pin J. Wang; Jong S. Kim; Chin C. Lee A novel process of bonding silver (Ag) foils to copper (Cu) substrates has been developed. This direct bonding method does not use any intermediate layer in between. An important application of this process is electronic packaging where semiconductor device...

... of horizontal copper and resin; outside the BGA-covered area the board is a copper/resin laminate and its surfaces are exposed to cooling air. Calculations are performed on a sample board having the dimensions 11 × 11 cm 2 ( footprint ) × 1.26 mm (thickness). The model of the board has two internal layers...

... impeded by a bigger one. 04 06 2007 03 12 2007 01 08 2008 chemical interdiffusion copper copper alloys current density dissolving electromigration finite element analysis flip-chip devices integrated circuit packaging silver alloys soldering solders tin alloys voids...

..., and coolant flow rate. It was found that the high thermal conductivity copper of the direct bonded copper (DBC) layer is the most feasible location for the channels. Based on a new analytical heat transfer model developed for microchannels in IPEM structures, several design configurations were proposed...

... channel design for an array of generic power amplifier units. Several different channel insert configurations are investigated as miniheat exchangers using both copper fins and graphite foam. Experiments were conducted measuring the chip temperatures as well as the inlet liquid temperature. CFD...

... of the sheared copper bond surfaces reveal sticking of Al which provides qualitative information of the area of the bond between the ball bond and the bond pad. In thermally aged gold ball bonds, the gold above the intermetallic layer fractures. The energy required to fracture a gold or copper ball bond of 1 ml...

...Shankar Krishnan; Suresh V. Garimella A transient thermal analysis is performed to investigate thermal control of power semiconductors using phase change materials, and to compare the performance of this approach to that of copper heat sinks. Both the melting of the phase change material under...

...John H. Lau; Stephen H. Pan In this study, a three-dimensional (3D) nonlinear stress analysis of the tin whisker initiation on a pure matte Sn-plated copper substrate is investigated. The structure is subjected to a compressive stress acting at the Sn layer which is generated by the spontaneous...

... of the Au-Al and Cu-Al intermetallic layer, i.e., dynamic hardness, intermetallic layer thickness, interfacial shear force, and electrical resistance in thermosonic copper wire bonding. The thermosonic wire bonding process was carried out by Shinkawa die and wire bonder SDW-35. The copper and gold...

...Christopher L. Borst; Dipto G. Thakurta; William N. Gill; Ronald J. Gutmann Successful integration of copper and low dielectric constant (low-k) materials is dependent on robust chemical-mechanical planarization (CMP) during damascene patterning. This process includes the direct removal of copper...

... the Ta upward relative to the copper, resulting in the increase in the Ta liner-plane stress. The Ta liner-plane stress increases by about 1.5 GPa (on average) when the w / t ratio is increased to 20. The greatest stress increment occurs near the bottom of the Ta. We feel that this is a very...

...Boris Mirman; Emanuel Bobrov Plastic compressive deformation of the copper layer at high temperatures is a significant contributor for die cracking in the under-bump-metallurgy (UBM) area of flip chips. Contributed by the Electronic and Photonic Packaging Division of THE AMERICAN SOCIETY...

... toughness curves for several different Cu/adhesive systems are obtained. [S1043-7398(00)00302-9] Specimens are machined from a copper rod with a diameter d = 25.4   mm (1.0 in.). From this rod, half-circular disks are extracted. These disks are machined with a radius R = 12.6   mm...