AlN thin film was coated over Cu substrate (575 mm2) with 400 nm thickness using DC sputtering for thermal interface material (TIM) application. Aluminum Nitride (AlN)-coated Cu substrate (AlN/Cu) was used as a heat sink for 3-W green light emitting diode (LED). The thermal transient curve was recorded for given LED attached with bare Cu and AlN-coated Cu substrate at three different driving currents. LED attached on AlN/Cu showed the reduced raise in junction temperature (TJ) by 2.59 °C at 700 mA. The LED/TIM/AlN/Cu boundary condition was not supported to reduce the TJ. The total thermal resistance (Rth-tot) was reduced for AlN-coated Cu substrate at 350 mA. The thermal resistance between metal core printed circuit board and Cu substrate (Rth-b-hs) was also observed as low for AlN-coated Cu substrates compared with other boundary conditions measured at 700 mA. The observed results were supported for the use of AlN thin film as TIM in high power LEDs.
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September 2014
Technical Briefs
Thermal Resistance Analysis of High Power Light Emitting Diode Using Aluminum Nitride Thin Film-Coated Copper Substrates as Heat Sink
S. Shanmugan,
S. Shanmugan
1
Nano Optoelectronics Research Laboratory,
School of Physics,
e-mail: shagan77in@yahoo.co.in
School of Physics,
Universiti Sains Malaysia (USM)
,Minden, Pulau Penang 11800
, Malaysia
e-mail: shagan77in@yahoo.co.in
1Corresponding author.
Search for other works by this author on:
D. Mutharasu
D. Mutharasu
Nano Optoelectronics Research Laboratory,
School of Physics,
School of Physics,
Universiti Sains Malaysia (USM)
,Minden, Pulau Penang 11800
, Malaysia
Search for other works by this author on:
S. Shanmugan
Nano Optoelectronics Research Laboratory,
School of Physics,
e-mail: shagan77in@yahoo.co.in
School of Physics,
Universiti Sains Malaysia (USM)
,Minden, Pulau Penang 11800
, Malaysia
e-mail: shagan77in@yahoo.co.in
D. Mutharasu
Nano Optoelectronics Research Laboratory,
School of Physics,
School of Physics,
Universiti Sains Malaysia (USM)
,Minden, Pulau Penang 11800
, Malaysia
1Corresponding author.
Contributed by the Electronic and Photonic Packaging Division of ASME for publication in the JOURNAL OF ELECTRONIC PACKAGING. Manuscript received September 7, 2013; final manuscript received April 4, 2014; published online May 12, 2014. Assoc. Editor: Masaru Ishizuka.
J. Electron. Packag. Sep 2014, 136(3): 034502 (6 pages)
Published Online: May 12, 2014
Article history
Received:
September 7, 2013
Revision Received:
April 4, 2014
Citation
Shanmugan, S., and Mutharasu, D. (May 12, 2014). "Thermal Resistance Analysis of High Power Light Emitting Diode Using Aluminum Nitride Thin Film-Coated Copper Substrates as Heat Sink." ASME. J. Electron. Packag. September 2014; 136(3): 034502. https://doi.org/10.1115/1.4027379
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