Background: This paper presents a reduced mathematical model using a practical numerical formulation of the thermal behavior of an integrated power electronics module (IPEM). This model is based on the expanded lumped thermal capacitance method (LTCM), in which the number of variables involved in the analysis of heat transfer is reduced only to time. Method of Approach: By applying the LTCM, a simple, nonspatial, but highly nonlinear model is obtained for the case of the IPEM Generation II. Steady and transient results of the model are validated against results from a three-dimensional, transient thermal analysis software tool, FLOTHERM™ 3.1. The electrothermal coupling was obtained by implementing the reduced-order thermal model into the SABER™ circuit simulator. Two experimental setups, for low- and high-speed thermal responses, were developed and used to calibrate the reduced model with actual data. Results: The comparison of the LTCM model implemented in a Generation II IPEM with FLOTHERM 3.1 results compared very favorably in terms of accuracy and efficiency, reducing the computational time significantly. Additional validations of the reduced thermal model were made using experiment data for the low-speed thermal response at different constant powers, and good agreement was demonstrated in all cases. A comparison between SABER™ simulations, which incorporated the proposed LTCM, and the fast thermal experimental response results is also presented to validate the dynamic electrothermal model response, and excellent agreement was found for this case. Conclusions: The good agreement found for all three cases presented, the three-dimensional, transient numerical formulation, and the low- and high-speed experimental data indicates that reduced electrothermal models are an excellent alterative for design methodologies of new generations of IPEMs.

1.
Chen, J., Pang, Y. F., Boroyevich, D., Scott, E., and Thole, K., 2002, “Electrical and Thermal Layout Design Considerations for Integrated Power Electronics Modules,” Industry Applications Conference, 2002, Conference Record of 37th IAS Annual Meeting, Vol. 1, pp. 242–246.
2.
Liang, Z., Lee, F. C., Wyk, V., and Lu, G. Q., 2001, “Embedded Power Technology for IPEMs Packaging Applications,” Proc. of 16th Annual IEEE, Applied Power Electronics Conference and Exposition, Vol. 2, pp. 1057–1061.
3.
Hefner, A. R., and Blackburn, D. L., 1992, “Simulating the Dynamic Electro-Thermal Behavior of Power Electronic Circuits and Systems,” IEEE Workshop on Computers in Power Electronics, IEEE, New York, pp. 143–151.
4.
Hefner
,
A. R.
, and
Blackburn
,
D. L.
,
1994
, “
Thermal Component Models for Electrothermal Network Simulation
,”
IEEE Trans. Compon., Packag. Manuf. Technol., Part A
,
pp.
413
424
(see also IEEE Trans. Compon. Hybrids Manuf. Technol.).
5.
Hefner
, Jr.,
A. R.
,
1994
, “
A Dynamic Electro-Thermal Model for the IGBT
,”
IEEE Trans. Appl. Ind.
,
30
(
2
), pp.
394
405
.
6.
Skibinski, G. L., and Sethares, W. A., 1990, “Thermal Parameter Estimation Using Recursive Estimation,” IEEE IAS Conf. Rec., IEEE, New York, p. 1581.
7.
Hsu
,
J. T.
, and
Vu-Quoc
,
L.
,
1996
, “
A Rational Formulation of Thermal Circuit Models for Electrothermal Simulation—Part I: Finite Element Method
,”
IEEE Trans. Circuits Syst., I: Fundam. Theory Appl.
,
43
(
9
), pp.
721
732
.
8.
Codecasa
,
L.
,
D’Amore
,
D.
, and
Maffezzoni
,
P.
,
2002
, “
Modeling the Thermal Response of Semiconductor Devices Through Equivalent Electrical Networks
,”
IEEE Trans. Circuits Syst., I: Fundam. Theory Appl.
,
49
(
8
), pp.
1187
1197
.
9.
Rodriguez, J., Parrilla, Z., Ve´lez-Reyes, M., Hefner, A., Berning, D., Reichl, J., and Lai, J., 2002, “Thermal Component Models for Electrothermal Analysis of Multichip Power Modules,” Industry Applications Conference, Conference Record of 37th IAS Annual Meeting, Vol. 1, pp. 234–241.
10.
Hsu
,
J. T.
, and
Vu-Quoc
,
L.
,
1996
, “
A Rational Formulation of Thermal Circuit Models for Electrothermal Simulation—Part II: Model Reduction Techniques
,”
IEEE Trans. Circuits Syst.
,
43
(
9
), pp.
733
744
.
11.
Lee
,
S. S.
, and
Allstot
,
D.
,
1993
, “
Electrothermal Simulation of Integrated Circuits
,”
IEEE J. Solid-State Circuits
,
28
(
12
), pp.
1283
1293
.
12.
Min
,
Y. J.
,
Palisoc
,
A.
, and
Lee
,
C. C.
,
1990
, “
Transient Thermal Study of Semiconductor Devices
,”
IEEE Trans. Compon., Hybrids, Manuf. Technol.
,
13
(
4
), pp.
980
988
.
13.
Chen, J., Wu, Y., Boroyevich, D., and Bøhn, J., 2000, “Integrated Electrical and Thermal Modeling and Analysis of IPEMs,” Proc. of 7th Workshop on Computers in Power Electronics, COMPEL 2000, pp. 24–27.
14.
Yovanovich, M. M., Culham, J. R., and Teertstra, P., 1997, “Calculating Interface Resistance,” http://www.electronics-cooling.com/Resources/EC_Articles/MAY97/article3.htm
15.
Holman, J. P., 2001, Heat Transfer, McGraw-Hill, New York, Science/Engineering/Math, 9th Edition, pp. 226–244.
16.
Tummala, R. R., 2001, Fundamentals of Microsystems Packaging, McGraw-Hill, New York, pp. 239–262.
17.
Khalid, S. F., 2002, Advanced Topics in LabWindows/CVI, Prentice Hall, Englewood Cliffs, NJ, National Instrument Virtual Instrumentation Series, pp. 35–243.
18.
FLOTHERM User Manual Version 3.2, Flomerics, Ltd., Marlborough, MA (http://www.flomerics.com)
19.
SABER Designer User Guide Release 5.1, Mountain View, CA (http://www.synopsis.com)
You do not currently have access to this content.