Successful integration of copper and low dielectric constant (low-k) materials is dependent on robust chemical-mechanical planarization (CMP) during damascene patterning. This process includes the direct removal of copper and interaction of the copper slurry with the underlying dielectric. Experiments were designed and performed to examine the CMP of two low-k polymers from Dow Chemical Company, bis-benzocyclobutene (BCB*, k=2.65) and “silicon-application low-k material” (SiLK* resin, k=2.65) with both acidic slurries suitable for copper damascene patterning and a KH phthalate-based model slurry developed for SiLK. Blanket polymer films were polished in order to determine the interactions that occur when copper and liner materials are removed by the damascene CMP process. Removal rates were obtained from material thickness measurements, post-CMP surface topography from AFM scans, and post-CMP surface chemistry from XPS measurements. Physically based wafer-scale models are presented which are compatible with the experimental results.
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December 2002
Technical Papers
Chemical-Mechanical Planarization of Low- Polymers for Advanced IC Structures
Christopher L. Borst,
Christopher L. Borst
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Dipto G. Thakurta,
Dipto G. Thakurta
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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William N. Gill,
William N. Gill
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Ronald J. Gutmann
Ronald J. Gutmann
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
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Christopher L. Borst
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
Dipto G. Thakurta
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
William N. Gill
Department of Chemical Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
Ronald J. Gutmann
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180-3590
Contributed by the Electronic and Photonic Packaging Division and presented at Poly 2000, London, United Kingdom, December 4–5, 2000. Manuscript received at ASME Headquarters, May 2002. Guest Editor: Bernd Michel.
J. Electron. Packag. Dec 2002, 124(4): 362-366 (5 pages)
Published Online: December 12, 2002
Article history
Received:
May 1, 2002
Online:
December 12, 2002
Citation
Borst , C. L., Thakurta , D. G., Gill, W. N., and Gutmann, R. J. (December 12, 2002). "Chemical-Mechanical Planarization of Low- Polymers for Advanced IC Structures ." ASME. J. Electron. Packag. December 2002; 124(4): 362–366. https://doi.org/10.1115/1.1510138
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