Three different methods of stress measurement with strong spatial resolution are presented. They base on stress relief techniques caused by focused ion beam milling, on altered electron backscattering by deformed lattices and on Stokes line shift measurements by Raman spectroscopy. The capability of these methods is demonstrated by their application to typical MEMS structures. A comparison between the methods is performed in order to outline potentials and limitations.
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Localized High-Resolution Stress Measurements on MEMS Structures
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Vogel, D, Gollhardt, A, & Michel, B. "Localized High-Resolution Stress Measurements on MEMS Structures." Proceedings of the ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASME 2009 InterPACK Conference, Volume 1. San Francisco, California, USA. July 19–23, 2009. pp. 743-747. ASME. https://doi.org/10.1115/InterPACK2009-89106
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