We have developed a generalized electrokinetic model suitable for the study of microchannel flows with conductivity gradients and shallow channel depths. An asymptotic analysis was performed with channel depth-to-width ratio as the smallness parameter, and three dimensional transport equations are reduced to a set to depth-averaged equations governing flow dynamics in the streamwise-spanwise plane of a shallow channel. The momentum equation uses a Darcy-Brinkman-Forchheimer type formulation, and the convective-diffusive transport of the conductivity field in the depth direction manifests itself as a dispersion effect on in-plane motion. Accuracy of the model was assessed by comparing the numerical results with direct numerical simulations. These depth-averaged equations provide the accuracy of three-dimensional modeling with a convenient quasi-two-dimensional equation set applicable to a fairly wide class of microfluidic devices.
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ASME 2004 International Mechanical Engineering Congress and Exposition
November 13–19, 2004
Anaheim, California, USA
Conference Sponsors:
- Fluids Engineering Division
ISBN:
0-7918-4709-8
PROCEEDINGS PAPER
A Depth-Averaged Model for Electrokinetic Flows in a Thin Microchannel Geometry
Brian D. Storey,
Brian D. Storey
Franklin W. Olin College of Engineering
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Juan G. Santiago
Juan G. Santiago
Stanford University
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Hao Lin
Stanford University
Brian D. Storey
Franklin W. Olin College of Engineering
Juan G. Santiago
Stanford University
Paper No:
IMECE2004-61017, pp. 139-144; 6 pages
Published Online:
March 24, 2008
Citation
Lin, H, Storey, BD, & Santiago, JG. "A Depth-Averaged Model for Electrokinetic Flows in a Thin Microchannel Geometry." Proceedings of the ASME 2004 International Mechanical Engineering Congress and Exposition. Fluids Engineering. Anaheim, California, USA. November 13–19, 2004. pp. 139-144. ASME. https://doi.org/10.1115/IMECE2004-61017
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