In this paper we present both experimental and theoretical results showing the effective use of material shaping to fabricate ultra-high-aspect-ratio (UHAR) vias with a focused ion beam (FIB). With this technique, one can create vias with aspect ratios of 20:1 and higher. This is achieved by placing a ‘lower sputter rate’ material on top of a ‘higher sputter rate’ material. We model the FIB as a Gaussian beam with an angular dependent sputter rate. With our model we predict a high sputter rate ratio (high/low) can achieve vias with aspect ratios near 20:1. Experimental results support this prediction. By placing a thin layer of pyrolyzed carbon on top of silicon, we fabricated UHAR vias with diameters of 75 nm.
NanoFIBrication of Ultra High Aspect Ratio Vias in Silicon
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Goettler, D, Su, M, Olsson, R, III, Burckel, DB, El-Kady, I, & Leseman, Z. "NanoFIBrication of Ultra High Aspect Ratio Vias in Silicon." Proceedings of the ASME 2010 International Mechanical Engineering Congress and Exposition. Volume 10: Micro and Nano Systems. Vancouver, British Columbia, Canada. November 12–18, 2010. pp. 561-564. ASME. https://doi.org/10.1115/IMECE2010-38956
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