Nonradiative power dissipation within and near the active region of a high power single mode slab coupled optical waveguide laser is directly measured by CCD-based thermoreflectance, including its variation with device bias. By examining the high spatial resolution temperature profile at the optical output facets, we quantify heat spreading from the source in the active region both downward to the substrate and upward to the metal top contact.

Volume Subject Area:
Heat Transfer
Topics:
Imaging, Lasers, Slabs, Waveguides, Energy dissipation, Heat, Metals, Resolution (Optics), Temperature profiles, Thermoreflectance
1.
Plant
J. J.
,
Juodawlkis
P. W.
;
Huang
R. K.
,
Donnelly
J. P.
,
Missaggia
L. J.
and
Ray
K. G.
,
2005
, “
1.5-μm InGaAsP-InP slab-coupled optical waveguide lasers
”,
IEEE Photonics Technology Letters
,
17
(
4)
,
735
–
737
2.
Juodawlkis
P. W.
,
Plant
J. J.
,
Huang
R. K.
,
Missaggia
L. J.
and
Donnelly
J. P.
,
2005
, “
High-power 1.5-μm InGaAsP-InP slab-coupled optical waveguide amplifier
”,
IEEE Photonics Technology Letters
,
17
(
2)
,
279
–
281
3.
Spagnolo
V.
,
Troccoli
M.
,
Scamarcio
G.
,
Gmachl
C.
,
Capasso
F.
,
Tredicucci
A.
,
Sergent
A. M.
;
Hutchinson
A. L.
,
Sivco
D. L.
and
Cho
A. Y.
,
2001
, “
Temperature profile of GalnAs/AllnAs/InP quantum cascade-laser facets measured by microprobe photoluminescence
”,
Applied Physics Letters
,
78
(
15)
, p
2095
–
2097
4.
Herrmann
F. U.
,
Beeck
S.
,
Abstreiter
G.
,
Hanke
C.
,
Hoyler
C.
and
Korte
L.
,
1991
, “
Reduction of mirror temperature in GaAs/AlGaAs quantum well laser diodes with segmented contacts
”
Applied Physics Letters
,
58
(
10)
,
1007
–
1009
5.
Lewis
D.
,
Dihaire
S.
,
Phan
T.
,
Quintard
V.
,
Horrnung
V.
and
Claeys
W.
,
1998
. “
Modeling and experimental study of heat deposition and transport in a semiconductor laser diode
,”
Microelectronics Journal
,
29
,
171
–
179
.
6.
Grauby
S.
,
Forget
B. C.
,
Hole
S.
and
Fournier
D.
,
1999
. “
High resolution photothermal imaging of high frequency phenomena using a visible charge coupled device camera associated with a multichannel lock-in scheme
”,
Review of Scientific Instruments
,
70
(
9)
,
3603
–
3608
7.
Carlslaw, H. S. and Jaeger, J. C., 1993, Conduction of Heat in Solids, Clarendon Press, Oxford
8.
Zhu
C.
,
Zhang
Y. G.
,
Li
A. Z.
, and
Zheng
Y. L.
,
2005
. “
Comparison of thermal characteristics of antimonide and phosphide MQW lasers
”,
Semiconductor Science and Technology
,
20
(
6)
,
563
–
567
9.
Sugimura
A.
,
1981
. “
Band-to-band Auger recombination effect on InGaAsP laser threshold
”,
IEEE Journal of Quantum Electronics
,
17
(
5)
,
627
–
635
10.
Piprek
J.
,
Abraham
P.
and
Bowers
J. E.
,
2000
. “
Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers
’,
IEEE Journal of Quantum Electronics
,
36
(
3)
, 2000,
366
–
374
11.
Coldren, L. A. and Corzine, S. W., 1995, Diode Lasers and Photonic Integrated Circuits, Wiley
12.
Pipe
K. P.
and
Ram
R. J.
,
2003
, “
Comprehensive heat exchange model for a semiconductor laser diode
”,
IEEE Photonics Technology Letters
15
(
4)
,
504
–
506
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