In this work, a numerical study is presented of the impact of growth substrates on thermal dissipation in GaN devices. Substrates included in this study are sapphire, SiC, GaN, ZnO, and LiGaO2. Based on a model high power HFET device with the rear side held at a fixed temperature, the maximum junction temperature in the devices were calculated using finite element analysis and compared. Both interface resistance and the effects of dislocations in the GaN layer were accounted for. Results show that state of the art devices dissipating 10 W/mm of power must be fabricated on high thermal conductivity substrates like GaN or SiC when rear side heat dissipation is utilized. In contrast, an analysis of high heat flux removal convective cooling was investigated for the application of front side heat dissipation. These results show that junction temperatures below 150°C are readily obtainable using this method and are substrate independent. The implications of the substrate independent cooling scheme are discussed.
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ASME 2004 International Mechanical Engineering Congress and Exposition
November 13–19, 2004
Anaheim, California, USA
Conference Sponsors:
- Heat Transfer Division
ISBN:
0-7918-4711-X
PROCEEDINGS PAPER
Heat Dissipation in GaN Power Semiconductor Devices
Adam Christensen,
Adam Christensen
Georgia Institute of Technology
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Samuel Graham
Samuel Graham
Georgia Institute of Technology
Search for other works by this author on:
Adam Christensen
Georgia Institute of Technology
Samuel Graham
Georgia Institute of Technology
Paper No:
IMECE2004-61525, pp. 257-266; 10 pages
Published Online:
March 24, 2008
Citation
Christensen, A, & Graham, S. "Heat Dissipation in GaN Power Semiconductor Devices." Proceedings of the ASME 2004 International Mechanical Engineering Congress and Exposition. Heat Transfer, Volume 2. Anaheim, California, USA. November 13–19, 2004. pp. 257-266. ASME. https://doi.org/10.1115/IMECE2004-61525
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