Heat conduction in highly compact silicon transistors is impeded due to localization of the electronically generated heat in the device drain. This work studies phonon transport from such heat sources using parallel molecular dynamics. Device Monte Carlo calculations provide an estimate of the size and energy density of the phonon source which is embedded in a one-dimensional crystal. We calculate the scattering times and decay channels for the excited phonons in the absence of thermal phonons. The hotspot is evolved in time and resulting atomic displacements are Fourier analyzed for various phonon modes. Simulations show that decay channels differ depending on the initial energy density of the hotspot. This approach provides a novel method of extracting anharmonic phonon scattering rates for non-equilibrium conditions in a transistor, where first order perturbation theory based calculations may be inaccurate.
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ASME 2004 Heat Transfer/Fluids Engineering Summer Conference
July 11–15, 2004
Charlotte, North Carolina, USA
Conference Sponsors:
- Heat Transfer Division and Fluids Engineering Division
ISBN:
0-7918-4693-8
PROCEEDINGS PAPER
Atomistic Simulations of G-Type Phonons in Silicon Devices
Sanjiv Sinha,
Sanjiv Sinha
Stanford University, Stanford, CA
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P. K. Schelling,
P. K. Schelling
Argonne National Laboratory, Argonne, IL
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S. R. Phillpot,
S. R. Phillpot
Argonne National Laboratory, Argonne, IL
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K. E. Goodson
K. E. Goodson
Stanford University, Stanford, CA
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Sanjiv Sinha
Stanford University, Stanford, CA
P. K. Schelling
Argonne National Laboratory, Argonne, IL
S. R. Phillpot
Argonne National Laboratory, Argonne, IL
K. E. Goodson
Stanford University, Stanford, CA
Paper No:
HT-FED2004-56429, pp. 433-439; 7 pages
Published Online:
February 24, 2009
Citation
Sinha, S, Schelling, PK, Phillpot, SR, & Goodson, KE. "Atomistic Simulations of G-Type Phonons in Silicon Devices." Proceedings of the ASME 2004 Heat Transfer/Fluids Engineering Summer Conference. Volume 4. Charlotte, North Carolina, USA. July 11–15, 2004. pp. 433-439. ASME. https://doi.org/10.1115/HT-FED2004-56429
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