A numerical study has been carried out to characterize the metalorganic chemical vapor deposition (MOCVD) growth of Gallium Nitride (GaN) in a rotating-disk reactor. The major objective of this work is to examine the dependence of the growth rate and thin film uniformity on the primary parameters. First of all, for a rotating-disk system, the governing equations involved are obtained. Then, with the effect of thermal buoyancy included and based on the detailed mathematical model and chemical reaction mechanisms, the 3D simulation study is conducted for a rotating reactor. A comparison between the predicted growth rate and experimental data is presented. In addition, the effect of various primary operating and design parameters on the growth rate of GaN and thin-film uniformity is also examined. This provides further insight into the reactor performance and the characteristics of the entire process. The results obtained can also form the basis for the future design and optimization of this system.

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