A numerical and experimental study has been performed to characterize the metal organic vapor phase epitaxy (MOVPE) growth of InGaN/GaN multi-quantum wells (MQW). One of the major objectives of the present study is to predict the optimal operating conditions that would be suitable for the fabrication of GaN-based light-emitting diodes (LED) using three different reactors, vertical, horizontal and planetary. Computational fluids dynamic (CFD) simulations considering gas phase chemical reactions and surface chemistry were carried out and compared with experimental measurements. Through a lot of CFD simulations, the database for the multiparametric dependency of indium incorporation and growth rate in InGaN/GaN layers has been established in a wide range of growth conditions. Also, a heating system using radio frequency (RF) power was verified to obtain the uniform temperature distribution by simulating the electro-magnetic field as well as thermodynamic flow fields. The present multidisciplinary approach has been applied to the development of a novel-concept MOVPE system as well as performance enhancement of existing commercial reactors.
Numerical and Experimental Study on Metal Organic Vapor Phase Epitaxy of InGaN/GaN Multi Quantum Wells
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Kim, CS, Hong, J, Shim, J, Kim, BJ, Kim, H, Yoo, SD, & Lee, WS. "Numerical and Experimental Study on Metal Organic Vapor Phase Epitaxy of InGaN/GaN Multi Quantum Wells." Proceedings of the ASME/JSME 2007 5th Joint Fluids Engineering Conference. Volume 1: Symposia, Parts A and B. San Diego, California, USA. July 30–August 2, 2007. pp. 1601-1608. ASME. https://doi.org/10.1115/FEDSM2007-37115
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